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C4666 Datasheet - Toshiba

C4666 2SC4666

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Switching Applications High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature.

C4666 Datasheet (225.44 KB)

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Datasheet Details

Part number:

C4666

Manufacturer:

Toshiba ↗

File Size:

225.44 KB

Description:

2sc4666.

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C4666 2SC4666 Toshiba

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