C4689 Datasheet - Toshiba

C4689 2SC4689

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4689 Power Amplifier Applications 2SC4689 Unit: mm Complementary to 2SA1804 Suitable for use in 55-W high fidelity audio amplifier’s output stage. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO .

C4689 Datasheet (121.62 KB)