Datasheet4U.com

CUS08F30 - Schottky Barrier Diode

Toshiba

📥 Download Datasheet

CUS08F30 Datasheet Preview — Preview of CUS08F30 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	CUS08F30
Manufacturer	Toshiba
File Size	122.80 KB
Description	Schottky Barrier Diode
Datasheet	CUS08F30-Toshiba.pdf

CUS08F30 Product details

Features

(1) Low forward voltage: VF(3) = 0.40 V (typ. ) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit CUS08F30 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 800 mA Non-repetitive peak forward surge current IFSM (Note 2) 5 A Junction temperature Tj  125  Storage.

📁 CUS08F30 Similar Datasheet

CUS01 - Schottky Barrier Rectifier (Toshiba Semiconductor)
CUS02 - Schottky Barrier Rectifier (Toshiba Semiconductor)
CUS-05050-0.5L - DC-DC Converter Modules (GROUP-TEK)
CUS-05050-1L - DC-DC Converter Modules (GROUP-TEK)
CUS1205 - 1 WATT (Power-One)
CUS1209 - 1 WATT (Power-One)
CUS1212 - 1 WATT (Power-One)
CUS1215 - 1 WATT (Power-One)

Other Datasheets by Toshiba

CUS05S30 - Schottky Barrier Diode
CUS05S40 - Schottky Barrier Diode
CUS10S30 - Schottky Barrier Diode
CUS10S40 - Schottky Barrier Diode
CUS15S30 - Schottky Barrier Diode
CUS15S40 - Schottky Barrier Diode

Published: Feb 28, 2025 |