Datasheet Specifications
- Part number
- CUS08F30
- Manufacturer
- Toshiba ↗
- File Size
- 122.80 KB
- Datasheet
- CUS08F30-Toshiba.pdf
- Description
- Schottky Barrier Diode
Description
Schottky Barrier Diode Silicon Epitaxial CUS08F30 1.Applications * High-Speed Switching 2..
Features
* (1) Low forward voltage: VF(3) = 0.40 V (typ. ) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit CUS08F30 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note RaCUS08F30 Distributors
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