CUS10S30 Datasheet - Toshiba

CUS10S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUS10S30 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage te.

CUS10S30-Toshiba.pdf