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D2385 2SD2385

D2385 Description

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm * High .

D2385 Applications

* Unit: mm
* High breakdown voltage: VCEO = 140 V (min)
* Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature S

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2SD2385 Toshiba
Toshiba D2385-like datasheet