Datasheet Specifications
- Part number
- DF2S23P2FU
- Manufacturer
- Toshiba ↗
- File Size
- 351.95 KB
- Datasheet
- DF2S23P2FU-Toshiba.pdf
- Description
- ESD Protection Diodes
Description
ESD Protection Diodes Silicon Epitaxial Planar DF2S23P2FU DF2S23P2FU 1.General The DF2S23P2FU is a TVS diode (ESD protection diode) protects semico.
Features
* (1) Suitable for use with a 20 V signal line. (VRWM ≤ 21 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.13 Ω (typ. )) (4) Low clamping voltage cApplications
* to protect against static electricity and noise. The DF2S23P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S23P2FU is housed in an standard package (2.5 mm × 1DF2S23P2FU Distributors
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