DF2S23P2FU Datasheet - Toshiba

DF2S23P2FU, ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2S23P2FU DF2S23P2FU 1.General The DF2S23P2FU is a TVS diode (ESD protection diode) protects semico.

Features

* (1) Suitable for use with a 20 V signal line. (VRWM ≤ 21 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.13 Ω (typ. )) (4) Low clamping voltage c

Applications

* to protect against static electricity and noise. The DF2S23P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S23P2FU is housed in an standard package (2.5 mm × 1

DF2S23P2FU-Toshiba.pdf