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HN1B01F - Silicon PNP/NPN Transistor

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Part number HN1B01F
Manufacturer Toshiba
File Size 850.84 KB
Description Silicon PNP/NPN Transistor
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HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit: mm Q1:  High voltage and high current : VCEO = −50 V, IC = −150 mA (max)  High hFE : hFE = 120 to 400  Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.) Q2:  High voltage and high current : VCEO = 50 V, IC = 150 mA (max)  High hFE : hFE = 120 to 400  Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.
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