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HN1B01F Datasheet - Toshiba

HN1B01F Silicon PNP/NPN Transistor

HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : h.

HN1B01F Datasheet (850.84 KB)

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Datasheet Details

Part number:

HN1B01F

Manufacturer:

Toshiba ↗

File Size:

850.84 KB

Description:

Silicon pnp/npn transistor.

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HN1B01F Silicon PNP NPN Transistor Toshiba

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