HN4A51J - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4A51J
Manufacturer	Toshiba
File Size	325.15 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN4A51J Datasheet
Additional preview pages of the HN4A51J datasheet.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A51J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) z Low noise: NF = 1dB (typ.) HN4A51J Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* −5 V −100 mA −20 mA 300 mW 1.EMITTER1 (E1) 2.BASE (B) 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.

Published: May 23, 2024 |