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HN4B01JE Datasheet - Toshiba

HN4B01JE-Toshiba.pdf

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Datasheet Details

Part number:

HN4B01JE

Manufacturer:

Toshiba ↗

File Size:

339.96 KB

Description:

Silicon npn/pnp epitaxial type transistor.

HN4B01JE, Silicon NPN/PNP Epitaxial Type Transistor

HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = <

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