K14A55D Datasheet (Toshiba)

K14A55D, TK14A55D

TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK14A55D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drai