Part number:
K170
Manufacturer:
File Size:
330.62 KB
Description:
Fet/ silicon n channel junction type(for low noise audio amplifier).
Datasheet Details
Datasheet Details
Part number:
K170
Manufacturer:
File Size:
330.62 KB
Description:
Fet/ silicon n channel junction type(for low noise audio amplifier).
K170, FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C.
head amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = 40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Ma
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