K1826 Datasheet - Toshiba

K1826 2SK1826

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications 4 V gate drive Low threshold voltage: Vth = 0.8~2.5 V High speed Enhancement-mode Small package Marking Equivalent Circuit 2SK1826 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VG.

K1826 Datasheet (139.08 KB)