K1829 Datasheet - Toshiba

K1829 2SK1829

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications 2.5 V gate drive Low threshold voltage: Vth = 0.5 to 1.5 V High speed Enhancement-mode Small package Marking Equivalent Circuit 2SK1829 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperat.

K1829 Datasheet (272.79 KB)