K3566
2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.)
- High forward transfer admittance: |Yfs| = 2.0 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
IAR EAR Tch Tstg
900 900 ±30 2.5
2.5 4 150 -55 to 150
W m J A m J °C °C
1: Gate 2: Drain
3:...
