MG30G1BL2

Silicon NPN Triple Transistor

Toshiba

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Datasheet Details

Part number:

MG30G1BL2

Manufacturer:

Toshiba ↗

File Size:

121.13 KB

Download:

📄 Download MG30G1BL2 Datasheet PDF

Description:

Silicon npn triple transistor.
: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIO.
NS. FEATURES . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic.

✔ MG30G1BL2 Features

. The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2A

✔ MG30G1BL2 Application

FEATURES . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Lo

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MG30G1BL2 Silicon NPN Triple Transistor Toshiba

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