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MG30G1BL2 Datasheet - Toshiba

MG30G1BL2 Silicon NPN Triple Transistor

MG30G1BL2 Features

* . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600

MG30G1BL2 Datasheet (121.13 KB)

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Datasheet Details

Part number:

MG30G1BL2

Manufacturer:

Toshiba ↗

File Size:

121.13 KB

Description:

Silicon npn triple transistor.

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MG30G1BL2 Silicon NPN Triple Transistor Toshiba

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