MG30G1BL2 Silicon NPN Triple Transistor

Toshiba

Description

: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIONS..

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Datasheet Specifications

Part number: MG30G1BL2
Manufacturer: Toshiba ↗
File Size: 121.13 KB
Datasheet: MG30G1BL2_Toshiba.pdf
Description: Silicon NPN Triple Transistor

Features

* . The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600

MG30G1BL2 Distributors

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MG30G1BL2 Silicon NPN Triple Transistor Toshiba

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