Datasheet4U.com

MG30G1BL2 - Silicon NPN Triple Transistor

Toshiba

📥 Download Datasheet

MG30G1BL2 Datasheet Preview — Preview of MG30G1BL2 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MG30G1BL2
Manufacturer	Toshiba ↗
File Size	121.13 KB
Description	Silicon NPN Triple Transistor
Datasheet	MG30G1BL2_Toshiba.pdf

MG30G1BL2 Product details

Features

. The Collector is Isolated from Ground. . High DC Current Gain : hpE=100(Min. ) (Ic=30A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2As(Max. ) (Ic=30A) Unit in mm.

📁 MG30G1BL2 Similar Datasheet

MG30G2YK1 - TRANSISTOR MODULES (ETC)
MG30G2YL1 - TRANSISTOR MODULES (ETC)
MG300G1UL1 - NPN (ETC)
MG300H1FL1 - NPN (ETC)
MG300H1UL1 - NPN (ETC)
MG300J2YS40 - SILICON N CHANNEL 1GBT (Toshiba Semiconductor)
MG300M1FK1 - NPN (ETC)
MG300M1UK1 - NPN (ETC)

Other Datasheets by Toshiba

MG30G1BL3 - (MG30Gxxxx) Transistor
MG30G1JL1 - (MG30Gxxxx) Transistor
MG30G2CL3 - Silicon NPN Triple Transistor
MG30G2DL1 - (MG30Gxxxx) Transistor
MG30G6EL1 - (MG30Gxxxx) Transistor
MG30G6EL2 - TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE

Published: May 25, 2006 |