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MG400V2YMS3 Datasheet - Toshiba

MG400V2YMS3 Silicon Carbide N-Channel MOSFET

MG400V2YMS3 Features

* (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150

* , built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3. Packaging and Internal Circuit Note: P and

MG400V2YMS3 Datasheet (555.73 KB)

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Datasheet Details

Part number:

MG400V2YMS3

Manufacturer:

Toshiba ↗

File Size:

555.73 KB

Description:

Silicon carbide n-channel mosfet.

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MG400V2YMS3 Silicon Carbide N-Channel MOSFET Toshiba

MG400V2YMS3 Distributor