MG400V2YMS3

Silicon Carbide N-Channel MOSFET

Toshiba

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Toshiba America Electronic Components	MG400V2YMS3	MG400V2YMS3(DAE)	HighPower Module Silicon Carbide NChannel MOSFET (Alt: MG400V2YMS3(DAE))	EBV Elektronik	0	0	$0	🛒 Buy Now

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Datasheet Details

Part number:

MG400V2YMS3

Manufacturer:

Toshiba ↗

File Size:

555.73 KB

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📄 Download MG400V2YMS3 Datasheet PDF

Description:

Silicon carbide n-channel mosfet.
High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1. Applications * High-.
Power Switching * Motor Controllers (including rail traction) 2. Features (1) VDSS = 1700 V, ID = 40.

✔ MG400V2YMS3 Features

(1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150
, built in thermi

✔ MG400V2YMS3 Application

High-Power Switching
Motor Controllers (including rail traction) 2. Features (1) VDSS = 1700 V, ID = 400

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MG400V2YMS3 Silicon Carbide N-Channel MOSFET Toshiba

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