MG400V2YMS3 Silicon Carbide N-Channel MOSFET

Toshiba

Description

High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1.Applications * High-Power Switching * Motor Controller.

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Datasheet Specifications

Part number: MG400V2YMS3
Manufacturer: Toshiba ↗
File Size: 555.73 KB
Datasheet: MG400V2YMS3-Toshiba.pdf
Description: Silicon Carbide N-Channel MOSFET

Features

* (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150
* , built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3. Packaging and Internal Circuit Note: P and

Applications

* High-Power Switching

MG400V2YMS3 Distributors

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MG400V2YMS3 Silicon Carbide N-Channel MOSFET Toshiba

Toshiba MG400V2YMS3-like datasheet