MG400Q1US65H Datasheet (Toshiba Semiconductor) - High Power & High Speed Switching Applications

MG400Q1US65H, High Power & High Speed Switching Applications

www.DataSheet4U.com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switching Applications Unit: mm High input impedance Enhancement-mode The electrodes are isolated from case.

Equivalent Circuit E C E JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol