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MG400Q1US65H Datasheet - Toshiba Semiconductor

MG400Q1US65H High Power & High Speed Switching Applications

www.DataSheet4U.com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switching Applications Unit: mm High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E C E JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol .

MG400Q1US65H Datasheet (223.78 KB)

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Datasheet Details

Part number:

MG400Q1US65H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.78 KB

Description:

High power & high speed switching applications.

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MG400Q1US65H High Power High Speed Switching Applications Toshiba Semiconductor

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