MG400Q1US65H High Power & High Speed Switching Applications

Toshiba Semiconductor

Description

www.DataSheet4U.com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switching Applications Unit: mm

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Datasheet Specifications

Part number: MG400Q1US65H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 223.78 KB
Datasheet: MG400Q1US65H_ToshibaSemiconductor.pdf
Description: High Power & High Speed Switching Applications

Applications

* Unit: mm
* High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E C E JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC

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MG400Q1US65H High Power High Speed Switching Applications Toshiba Semiconductor

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