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MG400Q1US65H - High Power & High Speed Switching Applications

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Part number MG400Q1US65H
Manufacturer Toshiba Semiconductor
File Size 223.78 KB
Description High Power & High Speed Switching Applications
Datasheet download datasheet MG400Q1US65H Datasheet
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www.DataSheet4U.com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switching Applications Unit: mm • • • High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E C E JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ⎯ ⎯ Weight: 465 g (typ.
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