MG400Q2YS60A Datasheet | Toshiba

.. TOSHIBA IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications - - - - Integrates a plete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance. VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 7 FO E1/C2 4 1 2 3 E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open 2002-09-06 Package Dimensions: 2-123C1B 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open Signal Terminal Layout 1. 7 5 8 2.54 25.4 ± 0.6 6 2. 3. 4. 5. 6. 7. 2.54 8. G (L) FO (L) E (L) VD G (H) FO (H) E (H) Open 3 1 4 2 Weight: 375 g 2002-09-06 Maximum Ratings (Ta = 25°C) Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol ¾ Rating 1200 ±20 400 A 800 400 A 800 3750 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V m A °C °C °C V N･m Unit V V Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 400 A Test Condition VGE = ±20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 400 m A VGE = 15 V, IC = 400 A Tj = 25°C Tj = 125°C Min ¾ ¾ ¾ 6.0 ¾ ¾ ¾ 0.10 VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 5.1 W (Note...