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RN1606 - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1606, a member of the RN1601 Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1606
Manufacturer Toshiba
File Size 962.93 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1606 Datasheet
Additional preview pages of the RN1606 datasheet.

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Other Datasheets by Toshiba
  • RN1601 - Silicon NPN Epitaxial Type Transistors
  • RN1602 - Silicon NPN Epitaxial Type Transistors
  • RN1603 - Silicon NPN Epitaxial Type Transistors
  • RN1604 - Silicon NPN Epitaxial Type Transistors
  • RN1605 - Silicon NPN Epitaxial Type Transistors
  • RN1607 - Silicon NPN Epitaxial Type Transistors
  • RN1608 - Silicon NPN Epitaxial Type Transistors
  • RN1609 - Silicon NPN Epitaxial Type Transistors

Full PDF Text Transcription

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RN1601 to RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in SM6 (super-mini-type with six (6) leads)  With built-in bias resistors  Simplified circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN2601 to RN2606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN1601 4.7 4.7 RN1602 10 10 RN1603 22 22 RN1604 47 47 RN1605 2.2 47 RN1606 4.7 47 SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15mg (typ.
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