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RN1706 - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1706, a member of the RN1701 Silicon NPN Epitaxial Type Transistors family.

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Other Datasheets by Toshiba
  • RN1706JE - Silicon NPN Epitaxial Type Transistors
  • RN1701 - Silicon NPN Epitaxial Type Transistors
  • RN1701JE - Silicon NPN Epitaxial Type Transistors
  • RN1702 - Silicon NPN Epitaxial Type Transistors
  • RN1702JE - Silicon NPN Epitaxial Type Transistors
  • RN1703 - Silicon NPN Epitaxial Type Transistors
  • RN1703JE - Silicon NPN Epitaxial Type Transistors
  • RN1704 - Silicon NPN Epitaxial Type Transistors

Full PDF Text Transcription

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RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN2701 to RN2706 Equivalent Circuit and Bias Resistor Values USV JEDEC ― JEITA ― TOSHIBA 2-2L1A Weight: 6.2mg (typ.) Part No. R1 (kΩ) R2 (kΩ) RN1701 4.7 4.7 RN1702 10 10 RN1703 22 22 RN1704 47 47 RN1705 2.2 47 RN1706 4.
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