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RN2308 - Silicon PNP Epitaxial Type Transistors

Download the RN2308 datasheet PDF. This datasheet also covers the RN2307 variant, as both devices belong to the same silicon pnp epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1307 to RN1309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2307 RN2308 RN2309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices &.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RN2307-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2308
Manufacturer Toshiba
File Size 841.70 KB
Description Silicon PNP Epitaxial Type Transistors
Datasheet download datasheet RN2308 Datasheet

Full PDF Text Transcription for RN2308 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RN2308. For precise diagrams, and layout, please refer to the original PDF.

RN2307 to RN2309 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2307/08/09 1. Applications • Switching • Inverter Circu...

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Transistor) RN2307/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1307 to RN1309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2307 RN2308 RN2309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporati