S1840 - Silicon NPN Transistor

Datasheet Summary

Features

Hi.
h Voltage : VCB0 =150V, VCE0 =150V.
Low Saturation Voltage : VCE(sat )=0 . 5V(Max. S1840 Unit in.

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	S1840
Manufacturer	Toshiba
File Size	99.12 KB
Description	Silicon NPN Transistor
Datasheet	S1840 Datasheet
Additional preview pages of the S1840 datasheet.

📁 Similar Datasheet

S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (YS)
S18-05N-1 - PROXIMITY SWITCH (HIGHLY)
S18-05N-2 - PROXIMITY SWITCH (HIGHLY)
S18-05P-1 - PROXIMITY SWITCH (HIGHLY)
S18-05P-2 - PROXIMITY SWITCH (HIGHLY)
S18-L232B-2 - Mini SMD Digital Pyroelectric Infrared Sensors (Senba Sensing)
S1812 - Shielded Surface Mount Inductors (API Delevan)
S1850 - Crystal Clock Oscillator (SaRonix)
S1854 - Silicon NPN Transistor (ETC)
S1856 - MOS Digital Clock (AMI Semiconductor)

Other Datasheets by Toshiba

S1805 - Silicon NPN Transistor
S1806 - Silicon PNP Transistor
S1807 - Silicon NPN Transistor
S1808 - Silicon PNP Transistor
S1836 - Silicon NPN Transistor
S1837 - Silicon PNP Transistor
S1838 - Silicon NPN Transistor
S1839 - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text

: SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) VIDEO OUTPUT STAGE FOR BAN TV. HIGH VOLTAGE SWITCHING APPLICATONS- FEATURES • Hi §h Voltage : VCB0 =150V, VCE0 =150V • Low Saturation Voltage : VCE(sat )=0 . 5V(Max. S1840 Unit in MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO VEBO ic IB PC r stg RATING 150 150 30 10 625 150 -55-150 UNIT V 1. EMITTER 2. BASE mA 3. COLLECTOR mA JEDEC mW EIAJ TO-92 SC-43 TOSHIBA 2-5F1P Weight : 0.

Published: Jun 10, 2024 |