T2N7002AK Datasheet - Toshiba

T2N7002AK Silicon N-Channel MOS Type Field-Effect Transistor

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current (Note1) DC Pulse Power dissipation Channel temperature Storage temperature Symbol VD.

T2N7002AK-Toshiba.pdf