T2N7002BK - Silicon N-Channel MOSFETs

Toshiba

Datasheet Details

(1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ. ) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ. ) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ. ) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2019-10-25 Rev.3.0 T2N7002BK 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage.

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Published: Sep 7, 2018 |