TBC548 Datasheet, Transistor, Toshiba

TBC548 Features

  • Transistor . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL

PDF File Details

Part number:

TBC548

Manufacturer:

Toshiba ↗

File Size:

52.49kb

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📄 Datasheet

Description:

Silicon npn transistor.

Datasheet Preview: TBC548 📥 Download PDF (52.49kb)
Page 2 of TBC548

TAGS

TBC548
Silicon
NPN
Transistor
Toshiba

📁 Related Datasheet

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise .

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise .

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB .

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB .

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . H.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . H.

TBC558 - Silicon PNP Transistor (Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . H.

TBC559 - Silicon PNP Transistor (Toshiba)
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Stock and price

Continental Device India Ltd
Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
TME
TBC548
0 In Stock
Qty : 12000 units
Unit Price : $0.02
No Longer Stocked
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