TC518128BFL-10V - SILICON GATE CMOS PSEUDO STATIC RAM
The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.
The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC518128B-Voperates from a single power su
TC518128BFL-10V Features
* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch widt
