TC5117400BSJ Datasheet, Ram, Toshiba Semiconductor

TC5117400BSJ Features

• Ram include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features
• 4,194,304 word by 4 bit or

PDF File Details

Part number:

TC5117400BSJ

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

1.10MB

Download:

📄 Datasheet

Description:

Dynamic ram. The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CM

TAGS

TC5117400BSJ

Toshiba Semiconductor

📁 Related Datasheet

TC5117400BSJ-60 - DRAM (Toshiba Semiconductor)
.. TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new gene.

TC5117400BSJ-70 - DRAM (Toshiba Semiconductor)
.. TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new gene.

TC5117400BST - DYNAMIC RAM (Toshiba Semiconductor)
.. TOSHIBA TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new genera.

TC5117400BST-60 - DRAM (Toshiba Semiconductor)
.. TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new gene.

TC5117400BST-70 - DRAM (Toshiba Semiconductor)
.. TOSHIBA TC5117400BSJ/BST-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ/BST is the new gene.

TC511000J-10 - DRAM (Toshiba)
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 Th.

TC511000J-12 - DRAM (Toshiba)
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 Th.

TC511000J-85 - DRAM (Toshiba)
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 Th.

TC511000P-10 - DRAM (Toshiba)
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 Th.

TC511000P-12 - DRAM (Toshiba)
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 Th.