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TC5117400BST-70

DRAM

TC5117400BST-70 Features

* include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features

* 4,194,304 word by 4 bit organization

* Fast access time and cycle time

* Single power supply of 5V± 10% with a built-in VBB g

TC5117400BST-70 General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed addres.

TC5117400BST-70 Datasheet (1.10 MB)

Preview of TC5117400BST-70 PDF

Datasheet Details

Part number:

TC5117400BST-70

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

1.10 MB

Description:

Dram.

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TAGS

TC5117400BST-70 DRAM Toshiba Semiconductor

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