TC5117400BSJ-70, TC5117400BSJ Datasheet - Toshiba Semiconductor

TC5117400BSJ-70 DRAM

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed addres.

TC5117400BSJ-70 Features

* include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features

* 4,194,304 word by 4 bit organization

* Fast access time and cycle time

* Single power supply of 5V± 10% with a built-in VBB g

TC5117400BSJ_ToshibaSemiconductor.pdf