Datasheet4U Logo Datasheet4U.com

TC5117400BSJ-60

DRAM

TC5117400BSJ-60 Features

* include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features

* 4,194,304 word by 4 bit organization

* Fast access time and cycle time

* Single power supply of 5V± 10% with a built-in VBB g

TC5117400BSJ-60 General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed addres.

TC5117400BSJ-60 Datasheet (1.10 MB)

Preview of TC5117400BSJ-60 PDF

Datasheet Details

Part number:

TC5117400BSJ-60

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

1.10 MB

Description:

Dram.

📁 Related Datasheet

TC5117400BSJ-70 DRAM (Toshiba Semiconductor)

TC5117400BSJ DYNAMIC RAM (Toshiba Semiconductor)

TC5117400BST DYNAMIC RAM (Toshiba Semiconductor)

TC5117400BST-60 DRAM (Toshiba Semiconductor)

TC5117400BST-70 DRAM (Toshiba Semiconductor)

TC511000J-10 DRAM (Toshiba)

TC511000J-12 DRAM (Toshiba)

TC511000J-85 DRAM (Toshiba)

TC511000P-10 DRAM (Toshiba)

TC511000P-12 DRAM (Toshiba)

TAGS

TC5117400BSJ-60 DRAM Toshiba Semiconductor

Image Gallery

TC5117400BSJ-60 Datasheet Preview Page 2 TC5117400BSJ-60 Datasheet Preview Page 3

TC5117400BSJ-60 Distributor