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TC518128BFTL-10V, TC518128BPL-70V Datasheet - Toshiba

TC518128BFTL-10V SILICON GATE CMOS PSEUDO STATIC RAM

The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-Voperates from a single power su.

TC518128BFTL-10V Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch widt

TC518128BFTL-10V, TC518128BPL-70V Datasheet

This datasheet PDF includes multiple part numbers: TC518128BFTL-10V, TC518128BPL-70V. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC518128BFTL-10V, TC518128BPL-70V

Manufacturer:

Toshiba ↗

File Size:

473.10 KB

Description:

Silicon gate cmos pseudo static ram.

This datasheet PDF includes multiple part numbers: TC518128BFTL-10V, TC518128BPL-70V. Please refer to the document for exact specifications by model.

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TC518128BFTL-10V SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

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