TC518128BPL-70V

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC518128BPL-70V Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch widt

TC518128BPL-70V General Description

The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-Voperates from a single power su.

TC518128BPL-70V Datasheet (473.10 KB)