TC518129APL-10LV

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC518129APL-10LV Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed

TC518129APL-10LV General Description

The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates from a single power.

TC518129APL-10LV Datasheet (470.28 KB)