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TC518512FTL-10LV, TC518512PL-70LV Datasheet - Toshiba

TC518512FTL-10LV SILICON GATE CMOS PSEUDO STATIC RAM

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage. The TC518512PL-LVoperates from a single 3.0V - 5..

TC518512FTL-10LV Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small

TC518512PL-70LV-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TC518512FTL-10LV, TC518512PL-70LV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC518512FTL-10LV, TC518512PL-70LV

Manufacturer:

Toshiba ↗

File Size:

384.03 KB

Description:

Silicon gate cmos pseudo static ram.

Note:

This datasheet PDF includes multiple part numbers: TC518512FTL-10LV, TC518512PL-70LV.
Please refer to the document for exact specifications by model.

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TC518512FTL-10LV TC518512PL-70LV SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

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