TC518512PL-80DR

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC518512PL-80DR Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small

TC518512PL-80DR General Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage. The TC518512PL operates from a single 5V power .

TC518512PL-80DR Datasheet (315.88 KB)