TC51864PL-10

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC51864PL-10 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package. Features

TC51864PL-10 General Description

The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51864PL operates from a single 5V power supp.

TC51864PL-10 Datasheet (311.09 KB)