Datasheet4U Logo Datasheet4U.com

TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM

TC51V8512AF-12 Description

rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM .
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

TC51V8512AF-12 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,

📥 Download Datasheet

Preview of TC51V8512AF-12 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TC51V - 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators (Tak Cheong)
  • TC51 - 1uA Voltage Detector (Microchip)
  • TC510 - Precision Analog Front Ends (Microchip)
  • TC511402 - 1048576 x 4 BIT DYNAMIC RAM (Toshiba Semiconductor)
  • TC511402AJ-60 - DRAM (Toshiba Semiconductor)
  • TC511402AP-60 - DRAM (Toshiba Semiconductor)
  • TC511402ASJ-60 - DRAM (Toshiba Semiconductor)
  • TC511402AZ-60 - DRAM (Toshiba Semiconductor)

📌 All Tags

SILICON GATE CMOS PSEUDO STATIC RAM Toshiba
Toshiba TC51V8512AF-12-like datasheet