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TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM

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Description

rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM .
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

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Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,

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