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TC51V8512AFT-12, TC51V8512AF-12 Datasheet - Toshiba

TC51V8512AFT-12 SILICON GATE CMOS PSEUDO STATIC RAM

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V pow.

TC51V8512AFT-12 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,

TC51V8512AF-12-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TC51V8512AFT-12, TC51V8512AF-12. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC51V8512AFT-12, TC51V8512AF-12

Manufacturer:

Toshiba ↗

File Size:

301.13 KB

Description:

Silicon gate cmos pseudo static ram.

Note:

This datasheet PDF includes multiple part numbers: TC51V8512AFT-12, TC51V8512AF-12.
Please refer to the document for exact specifications by model.

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TC51V8512AFT-12 TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

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