TC55V328J-35 Datasheet PDF - Toshiba 8-Bit CMOS SRAM Specs

TC55V328J-35 - 8-Bit CMOS SRAM

This page provides the datasheet information for the TC55V328J-35, a member of the TC55V328J 8-Bit CMOS SRAM family.

Datasheet Summary

Description

The TC55V328J is a 262,144 bit CMOS high speed static random access memory organized as 32,768 words by 8 bits and designed to operate from a single 3.3V supply.

Toshiba's advanced CMOS technology and circuit design enable high speed, low voltage operation.

Features

low power dissipation when the SRAM is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. It is suitable for use in high speed.

Datasheet Details

Part number	TC55V328J-35
Manufacturer	Toshiba
File Size	199.91 KB
Description	8-Bit CMOS SRAM
Datasheet	TC55V328J-35 Datasheet
Additional preview pages of the TC55V328J-35 datasheet.

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Full PDF Text Transcription

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TOSHIBA SILICON GATE CMOS 1l:55V328}20/25/35 PRELIMINARY 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55V328J is a 262,144 bit CMOS high speed static random access memory organized as 32,768 words by 8 bits and designed to operate from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed, low voltage operation. The TC55V328J features low power dissipation when the SRAM is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. It is suitable for use in high speed applications such as cache memory. All inputs and outputs are LVTTL (low voltage TIL) compatible. The TC55V328J is available in a 28-pin, 300mil SOJ package suitable for high density assembly.

Published: Feb 17, 2017 |