TC55V8512FT

(TC55V8512J/FT) 8-Bit CMOS SRAM

Toshiba

TC55V8512FT Features

* Fast access time (the following are maximum values) TC55V8512J/FT-12:12 ns TC55V8512J/FT-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 170 15 140 20 130 25 110 ns mA

* Single powe

TC55V8512FT General Description

The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the d.

TC55V8512FT Datasheet (161.58 KB)