TC55V8512FT, TC55V8512J - (TC55V8512J/FT) 8-Bit CMOS SRAM

Toshiba

Datasheet Details

Part number	TC55V8512FT, TC55V8512J
Manufacturer	Toshiba
File Size	161.58 KB
Description	(TC55V8512J/FT) 8-Bit CMOS SRAM
Datasheet	TC55V8512J_Toshiba.pdf
Note	This datasheet PDF includes multiple part numbers: TC55V8512FT, TC55V8512J. Please refer to the document for exact specifications by model.

The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits.

Fast access time (the following are maximum values) TC55V8512J/FT-12:12 ns TC55V8512J/FT-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 170 15 140 20 130 25 110 ns mA.
Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Package: SOJ36-P-400-1.27 (J) (Weight: 1.35 g typ) TSOP II44-P-400-0.

📁 TC55V8512FT Similar Datasheet

TC55V16100FT-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS (Toshiba Semiconductor)
TC55V16100FT-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS (Toshiba Semiconductor)
TC55V16100FT-15 - MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS (Toshiba Semiconductor)
TC55V16100FTI-12 - MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
TC55V16100FTI-15 - MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
TC55V16256FT-12 - 16-BIT CMOS STATIC RAM (Toshiba Semiconductor)
TC55V16256FT-15 - 16-BIT CMOS STATIC RAM (Toshiba Semiconductor)
TC55V16256FTI-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Mar 23, 2006 |