TC59SM708AFTL, TC59SM704 (TC59SM704 - TC59SM716) SDRAM

Toshiba

Description

www.DataSheet4U.com TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS × 4 BANKS.
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organiz.

📥 Download Datasheet

TC59SM708AFTL Datasheet Preview — This datasheet PDF includes multiple part numbers: TC59SM708AFTL, TC59SM704. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TC59SM708AFTL, TC59SM704
Manufacturer: Toshiba ↗
File Size: 2.77 MB
Datasheet: TC59SM704_Toshiba.pdf
Description: (TC59SM704 - TC59SM716) SDRAM
Note: This datasheet PDF includes multiple part numbers: TC59SM708AFTL, TC59SM704.
Please refer to the document for exact specifications by model.

Features

* PARAMETER -70 tCK Clock Cycle Time (min) 7 ns 42 ns 5.4 ns 57 ns 80 mA 100 mA 2 mA TC59SM716/M708/M704 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 2 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 2 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active

TC59SM708AFTL Distributors

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TC59SM704 TC59SM704 TC59SM716 SDRAM Toshiba

Toshiba TC59SM708AFTL-like datasheet