* PARAMETER -70 tCK Clock Cycle Time (min) 7 ns 42 ns 5.4 ns 57 ns 80 mA 100 mA 2 mA TC59SM716/M708/M704 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 2 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 2 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active
TC59SM716AFTL Datasheet (2.77 MB)
TC59SM716AFTL
2.77 MB
(tc59sm704 - tc59sm716) sdram.
www.DataSheet4U.com
TC59SM716/08/04AFT/AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
2,097,152-WORDS × 4 BANKS.
📁 Related Datasheet
TC59SM716AFT (TC59SM704 - TC59SM716) SDRAM (Toshiba)
TC59SM716FT (TC59SM704FT - TC59SM716FT) SDRAM (Toshiba)
TC59SM716FTL (TC59SM704FT - TC59SM716FT) SDRAM (Toshiba)
TC59SM704AFT (TC59SM704 - TC59SM716) SDRAM (Toshiba)
TC59SM704AFTL (TC59SM704 - TC59SM716) SDRAM (Toshiba)
TC59SM704FT (TC59SM704FT - TC59SM716FT) SDRAM (Toshiba)
TC59SM704FTL (TC59SM704FT - TC59SM716FT) SDRAM (Toshiba)
TC59SM708AFT (TC59SM704 - TC59SM716) SDRAM (Toshiba)
TC59SM708AFTL (TC59SM704 - TC59SM716) SDRAM (Toshiba)
TC59SM708FT (TC59SM704FT - TC59SM716FT) SDRAM (Toshiba)
