TC59SM804BFT, TC59SM816BFT (TC59SM804BFT - TC59SM816BFT) SDRAM

Toshiba

Description

www.DataSheet4U.com TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organiz.

📥 Download Datasheet

TC59SM804BFT Datasheet Preview — This datasheet PDF includes multiple part numbers: TC59SM804BFT, TC59SM816BFT. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TC59SM804BFT, TC59SM816BFT
Manufacturer: Toshiba ↗
File Size: 2.78 MB
Datasheet: TC59SM816BFT_Toshiba.pdf
Description: (TC59SM804BFT - TC59SM816BFT) SDRAM
Note: This datasheet PDF includes multiple part numbers: TC59SM804BFT, TC59SM816BFT.
Please refer to the document for exact specifications by model.

Features

* PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge

TC59SM804BFT Distributors

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TC59SM816BFT TC59SM804BFT TC59SM816BFT SDRAM Toshiba

Toshiba TC59SM804BFT-like datasheet