TC59SM816BFT Datasheet, Sdram, Toshiba

TC59SM816BFT Features

• Sdram PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -

PDF File Details

Part number:

TC59SM816BFT

Manufacturer:

Toshiba ↗

File Size:

2.78MB

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📄 Datasheet

Description:

(tc59sm804bft - tc59sm816bft) sdram. TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BF

TC59SM816BFT Application

• Applications such as work-stations. FEATURES PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active C

TAGS

TC59SM816BFT

Toshiba

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.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816CMBL - (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
.. TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
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