Datasheet Specifications
- Part number
- TC59SM816BFT
- Manufacturer
- Toshiba ↗
- File Size
- 2.78 MB
- Datasheet
- TC59SM816BFT_Toshiba.pdf
- Description
- (TC59SM804BFT - TC59SM816BFT) SDRAM
Description
www.DataSheet4U.com TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.
Features
* PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to PrechargeTC59SM816BFT Distributors
📁 Related Datasheet
📌 All Tags