* PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge
TC59SM816BFT Datasheet (2.78 MB)
TC59SM816BFT
2.78 MB
(tc59sm804bft - tc59sm816bft) sdram.
www.DataSheet4U.com
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
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TC59SM804BFTL (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
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