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TC59SM816BFT Datasheet, sdram equivalent, Toshiba

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Part number: TC59SM816BFT

Manufacturer: Toshiba (https://www.toshiba.com/)

File Size: 2.78MB

Download: 📄 Datasheet

Description: (TC59SM804BFT - TC59SM816BFT) SDRAM

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PDF File Details

Part number: TC59SM816BFT

Manufacturer: Toshiba (https://www.toshiba.com/)

File Size: 2.78MB

Download: 📄 Datasheet

Description: (TC59SM804BFT - TC59SM816BFT) SDRAM

TC59SM816BFT Features and benefits

PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM.

TC59SM816BFT Application

such as work-stations. FEATURES PARAMETER -70 tCK tAC tRC Clock Cycle Time (min) Access Time from CLK (max) Ref/Active .

TC59SM816BFT Description

TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is organized as 16,777,216 words .

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TAGS

TC59SM816BFT
TC59SM804BFT
TC59SM816BFT
SDRAM
Toshiba

📁 Related Datasheet

TC59SM816BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
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TC59SM816CMBL - (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
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TC59SM804CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
www..com TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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