* l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.) l Low Leakage Current : IGSS = ±3 µA (Max.) (VGS = ±16 V) : IGSS = 100 µA (Max.) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch) Weight: 0.14 g (Typ.) BLOCK DIAGRAM PIN CO
TD62M4503AFN Datasheet (108.26 KB)
TD62M4503AFN
108.26 KB
Power mos fet 4ch sink driver.
TD62M4503AFN
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI
*CHIP
TD62M4503AFN
POWER MOS FET 4CH SINK DRIVER
TD62M4503AFN is 1CHIP 4ch FET S.
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