Datasheet Specifications
- Part number
- TD62M4503AFN
- Manufacturer
- Toshiba ↗
- File Size
- 108.26 KB
- Datasheet
- TD62M4503AFN_ToshibaSemiconductor.pdf
- Description
- POWER MOS FET 4CH SINK DRIVER
Description
TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI *CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET S.
Features
* l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ. ) l Low Leakage Current : IGSS = ±3 µA (Max. ) (VGS = ±16 V) : IGSS = 100 µA (Max. ) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch) Weight: 0.14 g (Typ. ) BLOCK DIAGRAM PIN COApplications
* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which mTD62M4503AFN Distributors
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