* . High Voltage and High Current : VcEO=-50V(Min.), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementary to TED1402 Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter V
TED1602
79.44 KB
Silicon pnp transistor.
TED1602 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATUR.
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