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TED1702 - Silicon NPN Transistor

Features

  • . High h FE : h FE=106~300 . 1 Watts Amplifier.

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Datasheet Details

Part number TED1702
Manufacturer Toshiba
File Size 72.44 KB
Description Silicon NPN Transistor
Datasheet download datasheet TED1702 Datasheet

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Full PDF Text Transcription

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TED1702 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : h FE=106~300 . 1 Watts Amplifier Applications. . Complementary to TED1802 5.1 MAX. Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 35 UNIT Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage VEBO Collector Current 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 600 mW Junction Temperature 150 1. COLLECTOR 2. BASES 3. KMITTEK Storage Temperature Range r s tg -65-150 ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : 0.21g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.
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