TGI7785-120L Datasheet, Hemt, Toshiba

✔ TGI7785-120L Features

･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at P

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TGI7785-120L

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📄 Datasheet

Description:

Microwave power gan hemt.

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Toshiba America Electronic Components

RF Small Signal FieldEffect Transistor NChannel (Alt: TGI7785-120L)

EBV Elektronik

TGI7785-120L

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TGI7785-120L MICROWAVE POWER GaN HEMT Toshiba