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TGI7785-120L Datasheet - Toshiba

TGI7785-120L MICROWAVE POWER GaN HEMT

TGI7785-120L Features

* ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output

TGI7785-120L Datasheet (624.89 KB)

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Datasheet Details

Part number:

TGI7785-120L

Manufacturer:

Toshiba ↗

File Size:

624.89 KB

Description:

Microwave power gan hemt.

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TGI7785-120L MICROWAVE POWER GaN HEMT Toshiba

TGI7785-120L Distributor