Datasheet Specifications
- Part number
- TGI7785-120L
- Manufacturer
- Toshiba ↗
- File Size
- 624.89 KB
- Datasheet
- TGI7785-120L-Toshiba.pdf
- Description
- MICROWAVE POWER GaN HEMT
Description
MICROWAVE POWER GaN HEMT TGI7785-120L .
Features
* ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min. )= -25dBc at Pout= 44.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS OutputTGI7785-120L Distributors
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