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TGI7785-120L MICROWAVE POWER GaN HEMT

TGI7785-120L Description

MICROWAVE POWER GaN HEMT TGI7785-120L .

TGI7785-120L Features

* ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ・HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ・LOW INTERMODULATION DISTORTION IM3(Min. )= -25dBc at Pout= 44.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output

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