TGI0910-50 Datasheet, Hemt, Toshiba

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	Toshiba America Electronic Components	TGI0910-50	TGI0910-50	RF Power FieldEffect Transistor 1Element X Band Gallium Nitride NChannel High Electron Mobility FET (Alt: TGI0910-50)	EBV Elektronik	0	0	$0	🛒 Buy Now

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TGI0910-50

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Microwave power gan hemt.

ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

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TGI0910-50 MICROWAVE POWER GaN HEMT Toshiba