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TGI5867-50L Datasheet - Toshiba

TGI5867-50L MICROWAVE POWER GaN HEMT

TGI5867-50L Features

* ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -40dBc at Po=32.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SY

TGI5867-50L Datasheet (500.49 KB)

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Datasheet Details

Part number:

TGI5867-50L

Manufacturer:

Toshiba ↗

File Size:

500.49 KB

Description:

Microwave power gan hemt.

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TGI5867-50L MICROWAVE POWER GaN HEMT Toshiba

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