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TGI5867-50L MICROWAVE POWER GaN HEMT

TGI5867-50L Description

MICROWAVE POWER GaN HEMT TGI5867-50L .

TGI5867-50L Features

* ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ・HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION IM3(Min. )= -40dBc at Po=32.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SY

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